Part # IRF644B datasheet

Part Manufacturer: Motorola


Part Description: RF644B IRFS644B 250V N-Channel MOSF

Part Details:

IRF November 2001 644B/I RF IRF644B/IRFS644B S644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 14A, 250V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 47 nC) planar, DMOS technology. · Low Crss ( typical 30 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converter andswitch mode power supplies. D G TO-220 TO-220F G D S IRF Series G D S IRFS Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRF644B IRFS644B Units VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 14 14 * A - Continuous (TC = 100°C) 8.9 8.9 * A IDM Drain Current - Pulsed (Note 1)

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IRF644B.pdf Datasheet