Part # FQB12P10 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB12P10 FQI12P10 100V P-Channel MOSF


Part Details:

FQB12P 10 / FQI1 QFETTM FQB12P10 / FQI12P10100V P-Channel MOSFET 2P10 General Description Features These P-Channel enhancement mode power field effect · -11.5A, -100V, RDS(on) = 0.29 @VGS = -10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 21 nC) planar stripe, DMOS technology. · Low Crss ( typical 65 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are well · 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontrol. D D G G S D2-PAK I2-PAK G D S FQB Series FQI Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB12P10 / FQI12P10 Units VDSS Drain-Source Voltage -100 V ID Drain Current - Continuous (TC = 25°C) -11.5 A - Continuous (TC = 100°C) -8.1 A IDM Drain Current - Pulsed (Note 1) -46


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FQB12P10.pdf Datasheet