Part # RN2610 RN2611 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)


Part Details:

RN2610,RN2611 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2610,RN2611 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm l Including twodevices in SM6 (super mini type with 6 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1610~RN1611 Equivalent Circuit Maximum Ratings (Ta = 25°C) (Q1, Q2 common) JEDEC Characteristic Symbol Rating Unit EIAJ Collector-base voltage V TOSHIBA 2-3N1A CBO -50 V Weight: 0.015g Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Collector power dissipation PC* 300 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C * Total rating Equivalent Circuit (Top View) 1 2001-06-05 RN2610,RN2611 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Test Characteristic Symbol Test Condition


Please click the following link to download the datasheet:

RN2610 RN2611.pdf Datasheet