Part # FDPF12N35 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDP12N35 FDPF12N35 350V N-Channel MOSF

Part Details:

FDP12N35 / FDPF12N35 350V N-Ch April 2007 UniFET TM FDP12N35 / FDPF12N35 350V N-Channel MOSFET Features Description · 12A, 350V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect · Low gate charge ( typical 18 nC) transistors are produced using Fairchild s proprietary, planar · Low Crss ( typical 15 pF) stripe, DMOS technology. · Fas t switching This advanced technology has been especially tailored to · Improved dv/dt capability minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche annel MOSFET and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G TO-220 TO-220F G D S G D S FDP Series FDPF Series S Absolute Maximum Ratings Symbol Parameter FDP12N35 FDPF12N35 Unit VDSS Drain-Source Voltage 350 V ID Drain Current - Continuous (TC = 25°C) 12 12* A - Continuous (TC = 100°C) 7.2 7.2* A IDM Drain Current - Pulsed (Note 1) 48 48* A VGSS Gate-Source voltage

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FDPF12N35.pdf Datasheet