Part # 2SC5976 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: TOSHIBA Transistor Silicon NPN Epitaxial Type


Part Details:

2SC5976 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5976 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Flash Applications +0.2 2.8-0.3 +0.2 1.6-0.1 0.1 · High DC current gain: hFE = 250 to 400 (IC = 0.3 A) 2 5 · Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) .2 1 0.4± 0. 0 · High-speed switching: tf = 25 ns (typ.) 9± .9± 95 0.9 3 2. 1 2 0. Maximum Ratings (Ta = 25°C) 0.05 0.15 Characteristics Symbol Rating Unit .05 0 0.16± Collector-base voltage VCBO 50 V .7±0 Collector-emitter voltage VCEX 50 V 0.1 Collector-emitter voltage V


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2SC5976.pdf Datasheet