Part # FSB649 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FSB649 NPN Low Saturation Transistor

Part Details:

FSB649 FSB649 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Sourced from Process NC. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter FSB649 Units Collector-Emitter Voltage 25 V VCEO Collector-Base Voltage 35 V VCBO Emitter-Base Voltage 5 V VEBO Collector Current - Continuous 3 A IC Operating and Storage Junction Temperature Range -55 to +150 °C TJ, Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Max Symbol Characteristic Units FSB649 Total Device Dissipation 500 mW PD Thermal Resistance, Junction to Ambient 250 °C/W RJA

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FSB649.pdf Datasheet