Part # FDG315N datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDG315N N-Channel Logic Level PowerTrench MOSF

Part Details:

FDG315N July 2000 FDG315NN-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using · 2 A, 30 V. R = 0.12 @ V = 10 V Fairchild Semiconductor s advanced PowerTrench DS(ON) GS process that has been especially tailored to minimize R = 0.16 @ V = 4.5 V. DS(ON) GS on-state resistance and yet maintain superior switchingperformance. · Low gate charge (2.1nC typical). These devices are well suited for low voltage andbattery powered applications where low in-line power · High performance trench technology for extremely low loss and fast switching are required. R . DS(ON) · Compact industry standard SC70-6 surface mount Applications package. · DC/DC converter· Load switch· Power Management S D 1 6 D 2 5 G D 3 4 SC70-6 D Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20

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FDG315N.pdf Datasheet