Part # FDG311N datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDG311N N-Channel 2.5V Specified PowerTrench ..... MOSF

Part Details:

FDG31 February 2000 1N FDG311NN-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild · 1.9 A, 20 V. R = 0.115 @ V = 4.5 V Semiconductor s advanced PowerTrench process that DS(ON) GS has been especially tailored to minimize the on-state R = 0.150 @ V = 2.5 V. DS(ON) GS resistance and yet maintain low gate charge forsuperior switching performance. These devices are · Low gate charge (3nC typical). well suited for portable electronics applications. · High performance trench technology for extremely low Applications R . DS(ON) · Load switch · Compact industry standard SC70-6 surface mount · Power management package. · DC/DC converter S D 1 6 D 2 5 G D 3 4 D SC70-6 Absolute Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS

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FDG311N.pdf Datasheet