Part # FDPF12N50FT datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDP12N50F FDPF12N50FT N-Channel MOSF

Part Details:

FDP12N50F / FDPF12N December 2007 UniFETTM FDP12N50F / FDPF12N50FT tm N-Channel MOSFET 500V, 11.5A, 0.7 Features Description · RDS(on) = 0.59 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchild s proprietary, planar stripe, 50FT N-Channel MOSFET · Low gate charge ( Typ. 21nC) DMOS technology. · Low Crss ( Typ. 11pF) This advance technology has been especially tailored to mini- · Fast switching mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and · 100% avalanche tested commutation mode. These devices are well suited for high effi-cient switching mode power supplies and active power factor · Improve dv/dt capability correction. · RoHS compliant D G TO-220 TO-220F G D S G D S FDP Series FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter FDP12N50F FDPF12N50FT Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage ±30 V -Continuous (T I C = 25oC) 11.5 11.5* D Drain Current A -Continuous (TC = 100oC)

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FDPF12N50FT.pdf Datasheet