Part # 2SA1937 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: TOSHIBA Transistor Silicon PNP Triple Diffused Type


Part Details:

2SA1937 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High-Voltage Switching Applications Unit: mm · High voltage: VCEO = -600 V Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -600 V Collector-emitter voltage VCEO -600 V Emitter-base voltage VEBO -7 V DC IC -0.5 Collector current A Pulse ICP -1 Base current IB -0.25 A Ta = 25°C 1 Collector power P W dissipation C Tc = 25°C 10 Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C JEDEC JEITA


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2SA1937.pdf Datasheet