Part # FQA13N50CF datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA13N50CF 500V N-Channel MOSF


Part Details:

FQA13N50CF 5 July 2007 FRFET ® FQA13N50CF500V N-Channel MOSFET 00V N-Chann Features Description · 15A, 500V, RDS(on) = 0.48 @VGS = 10 V These N-Channel enhancement mode power field effect · Low gate charge (typical 43nC) transistors are produced using Fairchild s proprietary, planar · Low Crss (typical 20pF) stripe, DMOS technology. · Fas t switching This advanced technology has been especially tailored to el MOSFE · 100% avalanche tested minimize on-state resistance, provide superior switching · Improved dv/dt capability performance, and withstand high energy pulse in the avalanche · Fast recovery body diode (typical 100ns) and commutation mode. These devices are well suited for high · RoHS compliant efficient switched mode power supplies, active power factorcorrection, electronic lamp ballast based on half bridgetopology. T D G TO-3P G D S FQA Series S Absolute Maximum Ratings Symbol Parameter FQA13N50CF Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) 15 A - Continuous (TC = 100°C) 9.5 A IDM Drain Current - Pulsed (Note 1) 60 A VGSS


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FQA13N50CF.pdf Datasheet