Part # FDS6898AZ datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDS6898AZ Dual N-Channel Logic Level PWM Optimized PowerTrench MOSF


Part Details:

FDS6898AZ October 2001 FDS6898AZDual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced · 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 18 m @ VGS = 2.5 V PowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain · Low gate charge (16 nC typical) superior switching performance. · ESD protection diode (note 3) These devices are well suited for low voltage andbattery powered applications where low in-line power · High performance trench technology for extremely loss and fast switching are required. low RDS(ON) · High power and current handling capability DD1 DD1 5 4 DD2 D D2 6 Q1 3 SO-8 G1 7 2 S1 G G2 S Q2 S2 S 8 1 Pin 1 SO-8 S Absolute Maximum Ratings TA=25oC unless otherwise notedSymbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ± 12 V ID Drain Current


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FDS6898AZ.pdf Datasheet