Part # KSB1097 datasheet

Part Manufacturer: Motorola


Part Description: KSB1097 PNP Epitaxial Silicon Transistor

Part Details:

KSB109 7 KSB1097 Low Frequency Power Amplifier· Low Speed Switchng Industrial Use· Complement to KSD1588 1 TO-220F 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 80 V VCEO Collector-Emitter Voltage - 60 V VEBO Emitter-Base Voltage - 7 V IC Collector Current (DC) - 7 A ICP *Collector Current (Pulse) - 15 A IB Base Current - 3.5 A PC Collector Dissipation (Ta=25°C) 2 W PC Collector Dissipation (TC=25°C) 30 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW300µs, Duty Cycle10% Electrical Characteristics TC=25°C unless otherwise noted Symbol

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KSB1097.pdf Datasheet