Part # FQAF90N08 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQAF90N08 80V N-Channel MOSF

Part Details:

FQAF90N08 January 2001 QFETTM FQAF90N0880V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 56A, 80V, RDS(on) = 0.016 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 84 nC) planar stripe, DMOS technology. · Low Crss ( typical 200 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand a high energy pulse in the · Improved dv/dt capability avalanche and commutation modes. These devices are · 175°C maximum junction temperature rating well suited for low voltage applications such as automotive,high efficiency switching for DC/DC converters, and DCmotor control. D ! " ! " G ! " ! " TO-3PF G D S ! FQAF Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQAF90N08 Units VDSS Drain-Source Voltage 80 V ID Drain Current - Continuous (TC = 25°C) 56 A - Continuous (TC = 100°C) 39.6 A IDM Drain Current - Pulsed (Note 1)

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FQAF90N08.pdf Datasheet