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Part Manufacturer: Toshiba

Part Description: Toshiba

Part Details:

2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm · High Collector breakdown voltage: VCEO = 230 V (min) · Complementary to 2SA1962 · Suitable fro use in 80-W high fidelity audio amplifier s output stage Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1.5 A Collector power dissipation PC 130 W (Tc = 25°C) Junction temperature Tj JEDEC 150 °C Storage temperature range Tstg -55 to 150 °C JEITA TOSHIBA 2-16C1A Electrical Characteristics (Tc = 25°C) Weight: 4.7 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit

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