Part # STL6NM60N datasheet

Part Manufacturer: ST Microelectronics

ST Microelectronics

Part Description: N-channel 600 V - 0.85 Ω - 5.75 A - PowerFLAT™ (5x5) ultra low gate charge MDmesh™ II Power MOSF


Part Details:

STL6NM60N N-channel 600 V - 0.85 - 5.75 A - PowerFLATTM (5x5) ultra low gate charge MDmeshTM II Power MOSFET Features V R Type DSS @ DS(on) I T D JMAX Max STL6NM60N 650 V < 0.92 5.75 A(1) 1. The value is rated according Rthj-case 100% avalanche tested Low input capacitance and gate charge Low gate input resistance PowerFLAT (5x5) Application Switching applications Description Figure 1. Internal schematic diagram This series of devices implements the second generation of MDmeshTM Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company s strip layout to yield one of the world s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order code Marking Package Packaging STL6NM60N L6NM60N PowerFLATTM (5x5) Tape & reel November 2007 Rev 3 1/12 www.st.com 12 Contents STL6NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1


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STL6NM60N.pdf Datasheet