Part # ISL9N302AP3 datasheet

Part Manufacturer: Motorola


Part Description: ISL9N302AP3

Part Details:

ISL9N302AP3 January 2002 ISL9N302AP3 N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET · Fast switching technology and features low gate charge while maintaininglow on-resistance. · rDS(ON) = 0.0019 (Typ), VGS = 10V Optimized for switching applications, this device improves · rDS(ON) = 0.0027 (Typ), VGS = 4.5V the overall efficiency of DC/DC converters and allowsoperation to higher switching frequencies. · Qg (Typ) = 110nC, VGS = 5V Applications · Qgd (Typ) = 31nC · DC/DC converters · CISS (Typ) = 11000pF SOURCE DRAIN GATE D G DRAIN S (FLANGE) TO-220AB MOSFET Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current Continuous (T = 25oC, V = 10V) 75 A I C GS D Continuous (T o

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ISL9N302AP3.pdf Datasheet