Part # FDB12N50F datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDB12N50F N-Channel MOSFET, FRF


Part Details:

FDB12N50F N-Channel MOSFET November 2007 UniFETTM FDB12N50F tm N-Channel MOSFET, FRFET 500V, 11.5A, 0.7 Features Description · RDS(on) = 0.59 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchild s proprietary, planar stripe, · Low gate charge ( Typ. 21nC) DMOS technology. · Low Crss ( Typ. 11pF) This advance technology has been especially tailored to mini- · Fast switching mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and · 100% avalanche tested commutation mode. These devices are well suited for high effi-cient switching mode power supplies and active power factor · Improve dv/dt capability correction. · RoHS compliant D D G G D2-PAK S TO-263ABFDB Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage ±30 V -Continuous (T I C = 25oC) 11.5 D Drain Current A -Continuous (TC = 100oC) 6.9 IDM Drain Current - Pulsed (Note 1)


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FDB12N50F.pdf Datasheet