Part # FDG327N datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDG327N 20V N-Channel PowerTrench MOSF


Part Details:

FDG327N October 2001 FDG327N20V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed · 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V. specifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional RDS(ON) = 100 m @ VGS = 2.5 V switching PWM controllers. It has been optimized use RDS(ON) = 140 m @ VGS = 1.8 V in small switching regulators, providing an extremelylow RDS(ON) and gate charge (QG) in a small package. · Fast switching speed Applications · Low gate charge (4.5 nC typical) · DC/DC converter · High performance trench technology for extremely · Power management low RDS(ON) · Load switch · High power and current handling capability. S D 1 6 D 2 5 G D Pin 1 D 3 4 SC70-6 Absolute Maximum Ratings TA=25oC unless otherwise notedSymbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ± 8 V ID Drain Current ­ Continuous (Note 1a) 1.5 A


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FDG327N.pdf Datasheet