Part # FQB50N06L datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB50N06L FQI50N06L 60V LOGIC N-Channel MOSF

Part Details:

FQB50N06 May 2001 QFETTM L FQB50N06L / FQI50N06L / FQI 60V LOGIC N-Channel MOSFET 50N06L General Description Features These N-Channel enhancement mode power field effect · 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. · Low Crss ( typical 90 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are well · 175°C maximum junction temperature rating suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for powermanagement in portable and battery operated products. D D ! " ! " G ! " ! " G S D2-PAK I2-PAK G D S ! FQB Series FQI Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB50N06L / FQI50N06L Units VDSS Drain-Source Voltage 60 V ID Drain Current - Continuous (TC = 25°C) 52.4

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FQB50N06L.pdf Datasheet