Part # FSB619 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FSB619 NPN Low Saturation Transistor


Part Details:

FSB619 Discrete Power & Signal Technologies July 1998 FSB619 C E B SuperSOTTM-3 (SOT-23) NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter FSB619 Units Collector-Emitter Voltage 50 V VCEO Collector-Base Voltage 50 V VCBO Emitter-Base Voltage 5 V VEBO Collector Current - Continuous 2 A IC Operating and Storage Junction Temperature Range -55 to +150 °C TJ, Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Max Symbol Characteristic Units FSB619 Total Device Dissipation* 500 mW PD Derate above 25°C 4 mW/°C


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FSB619.pdf Datasheet