Part # FQB5N90 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB5N90 FQI5N90 900V N-Channel MOSF


Part Details:

90 September 2000 I5N FQ QFETTM FQB5N90 / FQI5N90900V N-Channel MOSFET B5N90 /FQ General Description Features These N-Channel enhancement mode power field effect · 5.4A, 900V, RDS(on) = 2.3 @ VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 31 nC) planar stripe, DMOS technology. · Low Crss ( typical 13 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply. D D ! " ! " G ! " ! " G S D2-PAK I2-PAK G D S ! FQB Series FQI Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB5N90 / FQI5N90 Units VDSS Drain-Source Voltage 900 V ID Drain Current - Continuous (TC = 25°C) 5.4 A - Continuous (TC = 100°C)


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FQB5N90.pdf Datasheet