Part # IRFS450B datasheet

Part Manufacturer: Motorola


Part Description: RFS450B 500V N-Channel MOSF

Part Details:

IRF November 2001 S450B IRFS450B500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 9.6A, 500V, RDS(on) = 0.39 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 87 nC) planar, DMOS technology. · Low Crss ( typical 60 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supplies,power factor correction and electronic lamp ballasts basedon half bridge. D ! G! TO-3PF G D S IRFS Series ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRFS450B Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) 9.6 A - Continuous (TC = 100°C) 6.1 A IDM Drain Current - Pulsed (Note 1) 38.4 A

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IRFS450B.pdf Datasheet