Part # 2SA1430 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: Toshiba


Part Details:

2SA1431 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1431 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications · High DC current gain and excellent hFE linearity : hFE(1) = 100 to 320 (VCE = -2 V, IC = -0.5 A) : hFE(2) = 70 (min) (VCE = -2 V, IC = -4 A) · Low saturation voltage: VCE (sat) = -1.0 V (max) (IC = -4 A, IB = -0.1 A) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -8 V DC IC -5 JEDEC Collector current Pulsed A ICP -8 JEITA (Note 1) TOSHIBA 2-7D101A Base current IB -0.5 A Weight: 0.2 g (typ.) Collector power dissipation PC 1000 mW Junction temperature Tj 150 °C Storage temperature range Tstg


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2SA1430.pdf Datasheet