Part # FQA90N15_F109 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA90N15_F109 150V N-Channel MOSF


Part Details:

FQA90N15_F109 150V N-Channel MOSF November 2007 QFET ® FQA90N15_F109150V N-Channel MOSFET Features Description · 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect · Low gate charge ( typical 220nC) transistors are produced using Fairchild s proprietary, planar · Low Crss ( typical 200pF) stripe, DMOS technology. · Fas t switching This advanced technology has been especially tailored to · 100% avalanche tested minimize on-state resistance, provide superior switching · Improved dv/dt capability performance, and withstand high energy pulse in the avalanche · 175°C maximum junction temperature rating and commutation mode. These devices are well suited for high · RoHS compliant efficient switched mode power supplies, active power factorcorrection, electronic lamp ballast based on half bridgetopology. ET D G TO-3PN G D S FQA Series S Absolute Maximum Ratings Symbol Parameter FQA90N15_F109 Units VDSS Drain-Source Voltage 150 V ID Drain Current - Continuous (TC = 25°C) 90 A - Continuous (TC = 100°C) 63.5 A IDM Drain Current - Pulsed (Note 1) 360 A VGSS Gate-Source Voltage ± 25


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FQA90N15_F109.pdf Datasheet