Part # 2SC5368 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: TOSHIBA Transistor Silicon NPN Triple Diffused Type


Part Details:

2SC5460 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications Unit: mm High-Voltage Switching Applications High-Voltage Amplifier Applications · High breakdown voltage: VCEO = 800 V Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 800 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Base current IB 25 mA Ta = 25°C 1.5 Collector power P W dissipation C Tc = 25°C 10 JEDEC Junction temperature Tj 150 °C JEITA Storage temperature range Tstg -55 to 150 °C TOSHIBA 2-8H1A Electrical Characteristics (Tc = 25°C) Weight: 0.82 g (typ.) Characteristics Symbol Test Condition Min


Please click the following link to download the datasheet:

2SC5368.pdf Datasheet