Part # 2N5830 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: 2N5830 NPN General Purpose Amplifier


Part Details:

2N5830 Discrete POWER & Signal Technologies 2N5830 C TO-92 B E NPN General Purpose Amplifier This device is designed for general purpose highvoltage amplifiers and gas discharge display driving. Sourcedfrom Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 100 V VCBO Col ector-Base Voltage 120 V VEBO Emitter-Base Voltage 5.0 V IC Col ector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N5830 PD Total Device Dissipation 625 mW Derate above 25°C 5.0 mW/°C RJC Thermal Resistance, Junction to Case 83.3 °C/W RJA Thermal Resistance, Junction to Ambient


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2N5830.pdf Datasheet