Part # FCB11N60F datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FCB11N60F 600V N-Channel MOSF

Part Details:

FCB1 May 2006 1 SuperFETTM N60F 6 FCB11N60F tm 00V N-Chann 600V N-Channel MOSFET Features Description · 650V @TJ = 150°C SuperFETTM is, Farichild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge · Typ . RDS(on) = 0.32 balance mechanism for outstanding low on-resistance and el MOSFE · Fast Recovery Type ( trr = 120ns ) lower gate charge performance. · Ultra low gate charge (typ. Qg = 40nC) This advanced technology has been tailored to minimize con-duction loss, provide superior switching performance, and with- · Low effective output capacitance (typ. Coss.eff = 95pF) stand extreme dv/dt rate and higher avalanche energy. · 100% avalanche tested Consequently, SuperFET is very suitable for various AC/DC T power conversion in switching mode operation for system min-iaturization and higher efficiency. D D G D2-PAK G S FCB Series S Absolute Maximum Ratings Symbol Parameter FCB11N60F Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 11 A - Continuous (TC = 100°C) 7 A IDM Drain Current - Pulsed (Note 1) 33

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FCB11N60F.pdf Datasheet