Part # FQAF12P20 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQAF12P20 200V P-Channel MOSF

Part Details:

0 May 2000 QFETTM FQAF12P2 FQAF12P20200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect · -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 31 nC) planar stripe, DMOS technology. · Low Crss ( typical 30 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters. S! G! ! TO-3PF G D S ! FQAF Series D Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQAF12P20 Units VDSS Drain-Source Voltage -200 V ID Drain Current - Continuous (TC = 25°C) -8.6 A - Continuous (TC = 100°C) -5.4 A IDM Drain Current - Pulsed (Note 1) -34.4 A

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FQAF12P20.pdf Datasheet