Part # FQAF47P06 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQAF47P06 60V P-Channel MOSF


Part Details:

FQAF47P0 May 2001 QFETTM 6 FQAF47P0660V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect · -38A, -60V, RDS(on) = 0.026 @VGS = -10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 84 nC) planar stripe, DMOS technology. · Low Crss ( typical 320 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand a high energy pulse in the · Improved dv/dt capability avalanche and commutation modes. These devices are · 175°C maximum junction temperature rating well suited for low voltage applications such as automotive,DC/DC converters, and high efficiency switching for powermanagement in portable and battery operated products. S! G! ! TO-3PF G D S FQAF Series ! D Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQAF47P06 Units VDSS Drain-Source Voltage -60 V ID Drain Current - Continuous (TC = 25°C) -38 A - Continuous (TC = 100°C) -26.8 A IDM Drain Current - Pulsed (Note 1) -152


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FQAF47P06.pdf Datasheet