Part # FDN361BN datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDN361BN 30V N-Channel, Logic Level, PowerTrench MOSF

Part Details:

FDN361BN October 2005 FDN361BN 30V N-Channel, Lo 30V N-Channel, Logic Level, PowerTrench® MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced · 1.8 A, 30 V. R using Fairchild Semiconductor s advanced DS(ON) = 110 m @ VGS = 10 V PowerTrench process that has been especially tailored RDS(ON) = 160 m @ VGS = 4.5 V to minimize the on-state resistance and yet maintain superior switching performance. · Low gate charge These devices are particularly suited for low voltage g applications in notebook computers, portable phones, · Industry standard outline SOT-23 surface mount ic Level, PowerTrench PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are package using proprietary SuperSOTTM-3 design for needed in a very small outline surface mount package. superior thermal and electrical capabilities · High performance trench technology for extremely low RDS(ON) D D S ® G S MOSFET G SuperSOT -3 TM Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage

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FDN361BN.pdf Datasheet