Part # 2SD2012 datasheet

Part Manufacturer: ST Microelectronics

ST Microelectronics

Part Description: NPN silicon power transistor

Part Details:

® 2SD2012 NPN SILICON POWER TRANSISTOR s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASYMOUNTING APPLICATIONS s GENERAL PURPOSE POWER AMPLIFIERS s GENERAL PURPOSE SWITCHING 3 DESCRIPTION 2 1 The 2SD2012 is a silicon NPN power transistorhoused in TO-220F insulated package.It is inteded for power linear and switching TO-220F applications. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 60 V VCEO Collector-Emitter Voltage (IB = 0) 60 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 3 A ICM Collector Peak Current (tp < 5 ms) 6 A IB Base Current 0.5 A Ptot Total Dissipation at Tc 25 oC 25 W

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2SD2012.pdf Datasheet