Part # RN2975 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)


Part Details:

RN2975 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2975 Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications. · Two devices are incorporated into an Ultra-Super-Mini (6-pin) package · Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Equivalent Circuit and Bias Resistor Values C R1 B R2 E R1: 2.2 k (Q1, Q2 common) JEDEC R2: 10 k (Q1, Q2 common) JEITA Maximum Ratings (Ta = 25°C) (Q1, Q2 common) TOSHIBA 2-2J1B Weight: 0.0068 g (typ.) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -6 V Collector current IC -100 mA Collector power dissipation PC (Note) 200 mW Junction temperature Tj 150 °C


Please click the following link to download the datasheet:

RN2975.pdf Datasheet