Part # FQA36P15_F109 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA36P15 FQA36P15_F109 150V N-Channel MOSF


Part Details:

FQA36P15 / FQA36P15_F109 August 2007 QFET ® FQA36P15 / FQA36P15_F109150V P-Channel MOSFET Features Description · -36A, -150V, RDS(on) = 0.09 @VGS = -10 V These P-Channel enhancement mode power field effect · Low gate charge ( typical 81 nC) transistors are produced using Fairchild s proprietary, planar · Low Crss ( typical 110pF) stripe, DMOS technology. · Fas t switching This advanced technology has been especially tailored to 15 · 100% avalanche tested minimize on-state resistance, provide superior switching · Improved dv/dt capability performance, and withstand high energy pulse in the avalanche 0V P-Channe · 175°C maximum junction temperature rating and commutation mode. These devices are well suited for highefficient switched mode power supplies, active power factorcorrection, electronic lamp ballast based on half bridgetopology. S l MOSFET G TO-3P G D S FQA Series D Absolute Maximum Ratings Symbol Parameter FQA36P15 Units VDSS Drain-Source Voltage -150 V ID Drain Current - Continuous (TC = 25°C) -36 A - Continuous (TC = 100°C) -25.5 A IDM Drain Current - Pulsed (Note 1) -144 A VGSS Gate-Source Voltage ± 30


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FQA36P15_F109.pdf Datasheet