Part # FQA9P25 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA9P25 250V P-Channel MOSF


Part Details:

FQA9P25 December 2000 QFETTM FQA9P25250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect · -10.5A, -250V, RDS(on) = 0.62 @VGS = -10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 29 nC) planar stripe, DMOS technology. · Low Crss ( typical 27 pF) This advanced technology is especially tailored to minimize · Fast switching on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand a high energy pulse in the · Improved dv/dt capability avalanche and commutation modes. These devices arewell suited for high efficiency switching DC/DC converters. S! G! ! TO-3P ! G D S FQA Series D Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQA9P25 Units VDSS Drain-Source Voltage -250 V ID Drain Current - Continuous (TC = 25°C) -10.5 A - Continuous (TC = 100°C) -6.6 A IDM Drain Current - Pulsed (Note 1) -42 A VGSS


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FQA9P25.pdf Datasheet