Part # KSB1151 datasheet

Part Manufacturer: Motorola


Part Description: KSB1151 PNP Epitaxial Silicon Transistor

Part Details:

KSB115 1 KSB1151 Feature· Low Collector-Emitter Saturation Voltage· Large Col ector Current· High Power Dissipation : PC=1.3W (Ta=25°C) · Complement to KSD 1691 1 TO-126 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V VEBO Emitter-Base Voltage - 7 V IC Collector Current (DC) - 5 A ICP *Collector Current (Pulse) - 8 A IB Base Current - 1 A PC Collector Dissipation (Ta=25°C) 1.3 W Collector Dissipation (TC=25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW10ms, Duty Cycle50% Electrical Characteristics TC=25°C unless otherwise noted Symbol

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KSB1151.pdf Datasheet