Part # FDG6316P datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDG6316P P-Channel 1.8V Specified PowerTrench MOSF


Part Details:

FDG6316P December 2001 FDG6316P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses · ­0.7 A, ­12 V. R Fairchild s advanced low voltage PowerTrench process. DS(ON) = 270 m @ VGS = ­4.5 V It has been optimized for battery power management RDS(ON) = 360 m @ VGS = ­2.5 V applications. RDS(ON) = 650 m @ VGS = ­1.8 V Applications · Low gate charge · Battery management · High performance trench technology for extremely · Load switch low RDS(ON) · Compact industry standard SC70-6 surface mount package S G S 1 or 4 6 or 3 D D G 2 or 5 5 or 2 G D G Pin 1 S D 3 or 6 4 or 1 S SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage ­12 V VGSS Gate-Source Voltage


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FDG6316P.pdf Datasheet