Part # BUL1102EFP datasheet

Part Manufacturer: ST Microelectronics

ST Microelectronics

Part Description: High voltage fast-switching NPN power transistor


Part Details:

® BUL1102EFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s HIGH VOLTAGE CAPABILITY s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION s VERY HIGH SWITCHING SPEED s FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING APPLICATIONS s FOUR LAMP ELECTRONIC BALLAST FOR: 3 2 120 V MAINS IN PUSH-PULL 1 CONFIGURATION; 277 V MAINS IN HALF BRIDGE CURRENT TO-220FP FEED CONFIGURATION. DESCRIPTION The device is manufactured using high voltageMulti Epitaxial Planar technology for highswitching speeds and high voltage capability. It INTERNAL SCHEMATIC DIAGRAM uses a Cellular Emitter structure with planar edgetermination to enhance switching speeds whilemaintaining a wide RBSOA.Thanks to an increased intermediate layer, it hasan intrinsic ruggedness which enables thetransistor to withstand a high collector currentlevel during Breakdown condition, without usingthe transil protection usually necessary in typicalconverters for lamp ballast. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 1100 V VCEO Collector-Emitter Voltage (IB = 0) 450 V VEBO Emitter-Base Voltage (IC = 0) 12 V IC Collector Current 4 A ICM Collector Peak Current (tp <5 ms) 8 A IB Base Current 2


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BUL1102EFP.pdf Datasheet