Part # FQA6N80_F109 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA6N80_F109 800V N-Channel MOSF

Part Details:

FQA6N80_F109 800V N-Chan September 2007 QFET ® FQA6N80_F109800V N-Channel MOSFET Features Description · 6.3A, 800V, RDS(on) = 1.95 @VGS = 10 V These N-Channel enhancement mode power field effect · Low gate charge ( typical 31 nC) transistors are produced using Fairchild s proprietary, planar · Low Crss ( typical 14pF) stripe, DMOS technology. · Fas t switching This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching nel MOSFET · 100% avalanche tested· Improved dv/dt capability performance, and withstand high energy pulse in the avalanche · RoHS compliant and commutation mode. These devices are well suited for highefficient switched mode power supplies, active power factorcorrection, electronic lamp ballast based on half bridgetopology. D G TO-3PN G D S FQA Series S Absolute Maximum Ratings Symbol Parameter FQA6N80_F109 Units VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 6.3 A - Continuous (TC = 100°C) 4.0 A IDM Drain Current - Pulsed (Note 1) 25.2 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2)

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FQA6N80_F109.pdf Datasheet