Part # FQA34N25 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA34N25 250V N-Channel MOSF


Part Details:

FQA34N25 October 2001 FQA34N25250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 34A, 250V, RDS(on) = 0.085 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 60 nC) planar, DMOS technology. · Low Crss ( typical 60 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters andswitch mode power supplies. D ! G! TO-3P ! G D S FQA Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQA34N25 Units VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 34 A - Continuous (TC = 100°C) 21.3 A IDM Drain Current - Pulsed (Note 1) 136 A VGSS


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FQA34N25.pdf Datasheet