Part # FQA90N15 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQH90N15 FQA90N15 N-Channel Power MOSF

Part Details:

FQH9 October 2006 0N15 / FQA90N15 N-Cha QFET ® FQH90N15 / FQA90N15 N-Channel Power MOSFET Features Description · 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect · Low gate charge (typical 220 nC) transistors are produced using Fairchild s proprietary, planar · Low C stripe, DMOS technology. rss (typical 200 pF) · Fas t switching This advanced technology has been especially tailored to · 100% avalanche tested minimize on-state resistance, provide superior switching nnel Po performance, and withstand high energy pulse in the avalanche · Improved dv/dt capability and commutation mode. These devices are well suited for low · 175°C maximum junction temperature rating voltage applications such as audio amplifire, high efficiency switching for DC/DC converters, and DC motor control, wer MOSFET uninterrupted power supply. D G TO-247 TO-3P G D FQH Series G D S FQA Series S S Absolute Maximum Ratings Symbol Parameter FQH90N15/FQA90N15 Unit VDSS Drain-Source Voltage 150 V ID Drain Current - Continuous (TC = 25°C) 90 A - Continuous (TC = 100°C) 63.5 A IDM Drain Current

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FQA90N15.pdf Datasheet