Part # 2SA1771 datasheet

Part Manufacturer: Toshiba


Part Description: TOSHIBA Transistor Silicon PNP Epitaxial Type

Part Details:

2SA1771 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1771 High-Current Switching Applications Unit: mm · Low collector saturation voltage: VCE (sat) = -0.4 V (max) (IC = -6 A) · High-speed switching: tstg = 0.6 µs (typ.) · High emitter-base breakdown voltage: V (BR) EBO = -14 V (min) Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -14 V Collector current IC -12 A Base current IB -1.2 A Collector power dissipation PC 30 W (Tc = 25°C) JEDEC Junction temperature Tj 150 °C JEITA SC-67 Storage temperature range Tstg -55 to 150 °C TOSHIBA 2-10R1A Electrical Characteristics (Tc = 25°C) Weight: 1.7 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit Col ector cut-off current ICBO VCB = -80 V, IE = 0

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2SA1771.pdf Datasheet