Part # FQA32N20C datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA32N20C 200V N-Channel MOSF


Part Details:

FQA32N20C QFET® FQA32N20C200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 32A, 200V, RDS(on) = 0.082 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 82.5 nC) planar, DMOS technology. · Low Crss ( typical 185 pF) This advanced technology has been especially tailored to · Fas t switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters andswitch mode power supplies. D G TO-3P G D S FQA Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQA32N20C Units VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25°C) 32 A - Continuous (TC = 100°C) 20.4 A IDM Drain Current - Pulsed (Note 1) 128 A VGSS Gate-Source Voltage ± 30


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FQA32N20C.pdf Datasheet