Part # BC337A datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: BC337A NPN Medium Power Transistor

Part Details:

BC337A -- NPN Medium Power T September 2007 BC337ANPN Medium Power Transistor · This device is designed for general purpose amplifier application at collector currents to 800mA.· Sourced from process 38. TO-92 1 ransistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V VCES Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 800 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta=25°C unless otherwise noted Symbol Parameter Max. Units PD Total Device Dissipation 625 mW Derate above 25°C 5.0 mW/°C RJC Thermal Resistance, Junction to Case 83.3 °C/W RJA Thermal Resistance, Junction to Ambient 200 °C/W

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BC337A.pdf Datasheet