Part # VNS3NV04D-E datasheet

Part Manufacturer: ST Microelectronics

ST Microelectronics

Part Description: OMNIFET II fully autoprotected Power MOSF


Part Details:

VNS3NV04D-E OMNIFET II fully autoprotected Power MOSFET Features Max On-State resistance (per ch.) RON 120m Current limitation (typ) ILIMH 3.5A Drain-Source clamp voltage VCLAMP 40V SO-8 Linear current limitation Thermal shut down Short circuit protection Description Integrated clamp The VNS3NV04D-E is a device formed by two Low current drawn from input pin monolithic OMNIFET II chips housed in a Diagnostic feedback through input pin standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Esd protection Technology: they are intended for replacement of Direct access to the gate of the power mosfet standard Power MOSFETs from DC up to 50KHz (analog driving) applications. Built in thermal shutdown, linear Compatible with standard power mosfet current limitation and overvoltage clamp protects the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. Table 1. Device summary Order codes Package Tube Tape and Reel SO-8 VNS3NV04D-E VNS3NV04DTR-E July 2007 Rev 2 1/21 www.st.com 21 Contents VNS3NV04D-E Contents 1


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VNS3NV04D-E.pdf Datasheet