Part # FQD3P50 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQD3P50 FQU3P50 500V P-Channel MOSF

Part Details:

0 August 2000 U3P5FQ QFETTM FQD3P50 / FQU3P50500V P-Channel MOSFET D3P50 / FQ General DescriptionThese P-Channel enhancement mode power field effecttransistors are produced using Fairchild s proprietary, Features planar stripe, DMOS technology. · -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 V This advanced technology has been especially tailored to · Low gate charge ( typical 18 nC) minimize on-state resistance, provide superior switching · Low Crss ( typical 9.5 pF) performance, and withstand high energy pulse in the · Fast switching avalanche and commutation mode. These devices are well · 100% avalanche tested suited for electronic lamp ballast based on complimentary · Improved dv/dt capability half bridge. S! D G ! ! D-PAK I-PAK G S FQD Series G D S FQU Series ! D Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQD3P50 / FQU3P50 Units VDSS Drain-Source Voltage -500 V ID Drain Current - Continuous (TC = 25°C) -2.1 A - Continuous (TC = 100°C) -1.33 A

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FQD3P50.pdf Datasheet