Part # FQD1N80 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQD1N80 FQU1N80 800V N-Channel MOSF

Part Details:

FQD1N80 / May 2001 QFETTM FQU1N80 FQD1N80 / FQU1N80800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 1.0A, 800V, RDS(on) = 20 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 5.5nC) planar stripe, DMOS technology. · Low Crss ( typical 2.7pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply. D D ! " ! " G ! " ! " D-PAK I-PAK G S FQD Series G D S FQU Series ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQD1N80 / FQU1N80 Units VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 1.0 A - Continuous (TC = 100°C) 0.63 A IDM

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FQD1N80.pdf Datasheet