The LM393 consists of two independent precision voltage comparators with an offset voltage specification as low as 2.0 mV max for two comparators which were designed specifically to operate from a single power supply over a wide range of voltages. Operation from split power
supplies is also possible and the low power supply current drain is independent of the magnitude of the power supply voltage. These comparators also have a unique characteristic in that the input common-mode voltage range includes ground, even though operated from a single power supply voltage.
Application areas include limit comparators, simple analog to digital converters; pulse, squarewave and time delay generators; wide range VCO; MOS clock timers; multivibrators
and high voltage digital logic gates. The LM393 series was designed to directly interface with TTL and CMOS. When operated from both plus and minus power supplies, the LM393 series will directly interface with MOS logic where their low power drain is a distinct advantage over standard comparators.
High precision comparators
Reduced VOS drift over temperature
Eliminates need for dual supplies
Allows sensing near ground
Compatible with all forms of logic
Power drain suitable for battery operation
The ULN2801A-ULN2805A each contain eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features a peak load current rating of 600mA (500mA continuous) and can withstand at least 50V in the off state. Outputs may be paralleled for higher current capability. Five versions are available to simplify interfacing to standard logic families : the ULN2801A is designed for general purpose applications with a current limit resistor ; the ULN2802A has a 10.5kW input resistor and zener for 14-25V PMOS ; the ULN2803A has a 2.7kW input resistor for 5V TTL and CMOS ; the ULN2804A has a 10.5kW input resistor for 6-15V CMOS and the ULN2805A is designed to sink a minimum of 350mA for standard and Schottky TTL where higher output current is required. All types are supplied in a 18-lead plastic DIP with a copper lead from and feature the convenient inputopposite-output pinout to simplify board layout.
The XBee/XBee-PRO DigiMesh 2.4 OEM RF Modules were engineered to support the unique needs of low-cost, low-power wireless sensor networks. The modules require minimal power and provide reliable delivery of data between remote devices.
The XBee modules us the ISM (Industrial, Scientific & Medical) 2.4 GHz frequency band
Long-range Data IntegrityXBee
Indoor/Urban: up to 100′ (30 m)
Outdoor line-of-sight: up to 300′ (100m)
Transmit Power: 1 mW (0dBm)
Receiver Sensitivity: -92 dBmXBee-PRO
Indoor/Urban: up to 300′ (90 m)
Outdoor line-of-sight: up to 1 mile (1600m)
Transmit Power: 63mW (18dBm) EIRP
Receiver Sensitivity: -100 dBm (1% packet error rate)
RF Data Rate: 250,000 bpsAdvanced Networking & Security
Retries and Acknowledgements
Self-routing, self-healing mesh networking
DSSS (Direct Sequence Spread Spectrum)
The XBee/XBee-PRO 2.4 DigiMesh OEM RF Modules interface to a host device through a logic-level asynchronous serial port. Through its serial port, the module can communicate with any logic and voltage compatible UART; or through a level translator to any serial device (For example: Through a Digi proprietary RS-232 or USB interface board).
is a base island technology NPN power transistor
in TO-220 plastic package with better performances than the industry standard TIP31
that make this device suitable for audio, power linear and switching applications. The PNP type is TIP32C.
Absolute maximim ratings:
Collector-base voltage (IE = 0) 100 V
Collector-emitter voltage (IB = 0) 100 V
Emitter-base voltage (IC = 0) 5 V
Collector current 3 A
Collector peak current 5 A
Base current 1 A
Total dissipation at Tcase = 25°C
Total dissipation at Tamb = 25°C
Storage temperature -65 to 150 °C
Max. operating junction temperature 150 °C